3CD3C Specs and Replacement
Type Designator: 3CD3C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-66
3CD3C Substitution
- BJT ⓘ Cross-Reference Search
3CD3C datasheet
isc Silicon PNP Power Transistors 3CD3C DESCRIPTION Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
Detailed specifications: SFT244, SFT245, MD1803DFH, 3DD4205D-O-M-N-C, 3DD4205D-O-Z-N-C, 2N3055B, 2SC3907S, 2T837A, TIP35C, 3DA27C, 3DA608, 3DA98A, 3DA98B, 3DD164F, BFG540-X, BFP196W, BFR182TW
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