3DA608 Specs and Replacement
Type Designator: 3DA608
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO-3
3DA608 Substitution
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3DA608 datasheet
3DA608 NPN A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 V(BR)CEO ICE=10mA 30 50 80 100 150 200 V V(BR)EBO IEB=5mA 4.0 V VCE=10V VCE=20V VCE=30V ICEO 2.0 mA VCE=40V VCE=60V VCE=80V IC=5.0A VCEsat 1.0 V IB=0.5A VCE=3.... See More ⇒
isc Silicon NPN Power Transistor 3DA608 DESCRIPTION High DC Current Gain- h 20-180@I = 7.5A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 3DA608A 40 ... See More ⇒
Detailed specifications: MD1803DFH, 3DD4205D-O-M-N-C, 3DD4205D-O-Z-N-C, 2N3055B, 2SC3907S, 2T837A, 3CD3C, 3DA27C, 8050, 3DA98A, 3DA98B, 3DD164F, BFG540-X, BFP196W, BFR182TW, BU506A, BU941ZL
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