All Transistors. BU506A Datasheet

 

BU506A Datasheet, Equivalent, Cross Reference Search

Type Designator: BU506A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 1350 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 2.25

Noise Figure, dB: -

Package: TO-220

BU506A Transistor Equivalent Substitute - Cross-Reference Search

 

BU506A Datasheet (PDF)

0.1. bu506a.pdf Size:240K _inchange_semiconductor

BU506A
BU506A

isc Silicon NPN Power Transistor BU506A DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector

9.1. bu506df.pdf Size:69K _philips

BU506A
BU506A

DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The B

9.2. bu506.pdf Size:65K _philips

BU506A
BU506A

DISCRETE SEMICONDUCTORS DATA SHEET BU506; BU506D Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The B

 9.3. bu506f.pdf Size:211K _inchange_semiconductor

BU506A
BU506A

isc Silicon NPN Power Transistor BU506F DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector

9.4. bu506df.pdf Size:214K _inchange_semiconductor

BU506A
BU506A

isc Silicon NPN Power Transistor BU506DF DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in Integrated Efficiency Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a

 9.5. bu506d.pdf Size:212K _inchange_semiconductor

BU506A
BU506A

isc Silicon NPN Power Transistor BU506D DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector

9.6. bu506.pdf Size:210K _inchange_semiconductor

BU506A
BU506A

isc Silicon NPN Power Transistor BU506 DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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