All Transistors. MJF13005 Datasheet

 

MJF13005 Datasheet and Replacement


   Type Designator: MJF13005
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO-220F
 

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MJF13005 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
 mjf13005.pdf pdf_icon

MJF13005

isc Silicon NPN Power Transistor MJF13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max.) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

 7.1. Size:80K  njs
 mjf13009.pdf pdf_icon

MJF13005

 7.2. Size:215K  inchange semiconductor
 mjf13009.pdf pdf_icon

MJF13005

isc Silicon NPN Power Transistor MJF13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

 7.3. Size:215K  inchange semiconductor
 mjf13007.pdf pdf_icon

MJF13005

isc Silicon NPN Power Transistor MJF13007DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa

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History: DRC3A43E | ZTX1051A | JC327-16 | WT5101-09 | 3CA834 | NA31X | HSD669A

Keywords - MJF13005 transistor datasheet

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