MJF13005 Datasheet. Specs and Replacement

Type Designator: MJF13005  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO-220F

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MJF13005 datasheet

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MJF13005

isc Silicon NPN Power Transistor MJF13005 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.6(Max.) @ I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒

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MJF13005

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 7.2. Size:215K  inchange semiconductor

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MJF13005

isc Silicon NPN Power Transistor MJF13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒

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MJF13005

isc Silicon NPN Power Transistor MJF13007 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are pa... See More ⇒

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Detailed specifications: BUV26G, DK151G, DS15, J6920, KSA940TU, KSC2073TU, MJE15036, MJE15037, 2SC945, QM5HG-24, S2530A, TIP127B, TIP35AB, TIP35AT, TIP36AB, TIP36AT, UM8168L

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