SS8550-L Datasheet. Specs and Replacement
Type Designator: SS8550-L 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT23
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SS8550-L datasheet
ss8550-l ss8550-h ss8550-j.pdf ![]()
SS8550 TRANSISTOR(PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipati... See More ⇒
ss8550-l ss8550-h ss8550-j.pdf ![]()
Jingdao Microelectronics co.LTD SS8550 SS8550 SOT-23 PNP TRANSISTOR 3 FEATURES High Collector Current Complementary to SS8050 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Parameter Symbol Value Unit 1.BASE 2.EMITTER Collector Base Voltage VCBO -40 V 3.COLLECTOR Collector Emitter Voltage VCEO -25 V... See More ⇒
ss8550-l ss8550-h ss8550-j.pdf ![]()
SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector ... See More ⇒
Detailed specifications: QM5HG-24, S2530A, TIP127B, TIP35AB, TIP35AT, TIP36AB, TIP36AT, UM8168L, 2SB688, SS8550-H, SS8550-J, 2T837B, 2T837V, 2T837G, 2T837D, 2T837E, 9014M-B
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