SS8550-H Specs and Replacement
Type Designator: SS8550-H
SMD Transistor Code: HY2D
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
SS8550-H Substitution
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SS8550-H datasheet
ss8550-l ss8550-h ss8550-j.pdf 
SS8550 TRANSISTOR(PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipati... See More ⇒
ss8550-l ss8550-h ss8550-j.pdf
Jingdao Microelectronics co.LTD SS8550 SS8550 SOT-23 PNP TRANSISTOR 3 FEATURES High Collector Current Complementary to SS8050 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Parameter Symbol Value Unit 1.BASE 2.EMITTER Collector Base Voltage VCBO -40 V 3.COLLECTOR Collector Emitter Voltage VCEO -25 V... See More ⇒
ss8550-l ss8550-h ss8550-j.pdf
SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector ... See More ⇒
Detailed specifications: S2530A , TIP127B , TIP35AB , TIP35AT , TIP36AB , TIP36AT , UM8168L , SS8550-L , BC549 , SS8550-J , 2T837B , 2T837V , 2T837G , 2T837D , 2T837E , 9014M-B , 9014M-C .
Keywords - SS8550-H pdf specs
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