2T837B Datasheet. Specs and Replacement

Type Designator: 2T837B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO-220

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2T837B datasheet

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2T837B

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2T837B

isc Silicon PNP Power Transistor 2T837A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-220 packaging Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -... See More ⇒

Detailed specifications: TIP35AB, TIP35AT, TIP36AB, TIP36AT, UM8168L, SS8550-L, SS8550-H, SS8550-J, 2SA1015, 2T837V, 2T837G, 2T837D, 2T837E, 9014M-B, 9014M-C, 9014M-D, 9015M-B

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