All Transistors. 9014M-B Datasheet

 

9014M-B Datasheet, Equivalent, Cross Reference Search

Type Designator: 9014M-B

SMD Transistor Code: HJ6B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 2.2 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

9014M-B Transistor Equivalent Substitute - Cross-Reference Search

 

9014M-B Datasheet (PDF)

9.1. 9014m hj6a hj6b hj6c hj6d.pdf Size:704K _1

9014M-B
9014M-B

9014M Rev.F Apr.-2017 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features P 大,h 高且特性好,与 9015M 互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M.  用途 / Applications 用于低电平、低噪声的前置放大器。 low freq

9.2. 9014m.pdf Size:680K _blue-rocket-elect

9014M-B
9014M-B

9014M(BR3DG9014M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015M(BR3CG9015M)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M(BR3CG9015M). 用途 / Applications 用于低电平、低噪声的

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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