9014M-D Datasheet, Equivalent, Cross Reference Search
Type Designator: 9014M-D
SMD Transistor Code: HJ6D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: SOT23
9014M-D Transistor Equivalent Substitute - Cross-Reference Search
9014M-D Datasheet (PDF)
9.1. 9014m hj6a hj6b hj6c hj6d.pdf 
Size:704K _1
9014M Rev.F Apr.-2017 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015M 互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M. 用途 / Applications 用于低电平、低噪声的前置放大器。 low freq
9.2. 9014m.pdf Size:680K _blue-rocket-elect
9014M(BR3DG9014M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015M(BR3CG9015M)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M(BR3CG9015M). 用途 / Applications 用于低电平、低噪声的
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
