All Transistors. 9015M-B Datasheet

 

9015M-B Datasheet, Equivalent, Cross Reference Search

Type Designator: 9015M-B

SMD Transistor Code: HM6B

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

9015M-B Transistor Equivalent Substitute - Cross-Reference Search

 

9015M-B Datasheet (PDF)

9.1. 9015m hm6a hm6b hm6c hm6d.pdf Size:772K _1

9015M-B
9015M-B

9015M Rev.F Apr.-2017 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.  特征 / Features P 大,h 高且特性好,与 9014M 互补。 C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014M.  用途 / Applications 用于低电平、低噪声的前置放大器。 low freque

9.2. 9015m.pdf Size:442K _blue-rocket-elect

9015M-B
9015M-B

9015M(BR3CG9015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9014M(BR3DG9014M)互补。 C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014M(BR3DG9014M). 用途 / Applications 用于低电平、低噪声的前

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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