2SA1150O Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SA1150O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 19 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

2SA1150O Transistor Equivalent Substitute - Cross-Reference Search

2SA1150O Datasheet (PDF)

7.1. Size:193K toshiba
2sa1150.pdf

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I

8.1. Size:166K nec
2sa1156.pdf