9015M-D Datasheet, Equivalent, Cross Reference Search
Type Designator: 9015M-D
SMD Transistor Code: HM6D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: SOT23
9015M-D Transistor Equivalent Substitute - Cross-Reference Search
9015M-D Datasheet (PDF)
9.1. 9015m hm6a hm6b hm6c hm6d.pdf 
Size:772K _1
9015M Rev.F Apr.-2017 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9014M 互补。 C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014M. 用途 / Applications 用于低电平、低噪声的前置放大器。 low freque
9.2. 9015m.pdf Size:442K _blue-rocket-elect
9015M(BR3CG9015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9014M(BR3DG9014M)互补。 C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014M(BR3DG9014M). 用途 / Applications 用于低电平、低噪声的前
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
