3DD401 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD401
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
3DD401 Transistor Equivalent Substitute - Cross-Reference Search
3DD401 Datasheet (PDF)
0.1. 3dd4013 a1d.pdf 
Size:181K _crhj
NPN R 3DD4013 A1D 3DD4013 A1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
0.2. 3dd4013a1d.pdf Size:181K _crhj
NPN R 3DD4013 A1D 3DD4013 A1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
0.3. 3dd4013a6d.pdf Size:151K _crhj
NPN R 3DD4013 A6D 3DD4013 A6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
0.4. 3dd4013 b1d.pdf Size:182K _crhj
NPN R 3DD4013 B1D 3DD4013 B1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
0.5. 3dd4013b1d.pdf Size:182K _crhj
NPN R 3DD4013 B1D 3DD4013 B1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
0.6. 3dd4013 a6d.pdf Size:151K _crhj
NPN R 3DD4013 A6D 3DD4013 A6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
0.7. 3dd401.pdf Size:221K _inchange_semiconductor
isc Silicon NPN Power Transistor 3DD401DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
