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3DD401 Specs and Replacement

Type Designator: 3DD401

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

 3DD401 Substitution

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3DD401 datasheet

 ..1. Size:221K  inchange semiconductor

 3dd401.pdf pdf_icon

3DD401

isc Silicon NPN Power Transistor 3DD401 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-... See More ⇒

 0.1. Size:151K  crhj

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3DD401

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Detailed specifications: ST2310DHI , 3DD13005MD-O-HF-N-B , 3DD13005MD-O-Z-N-C , Q3-2 , YZ21D , 3DD1555 , 3DD13007K , BRMJE172D , BD222 , XW6821 , XW6822 , XW6822A , XW6823 , XW6823A , XW13001 , SXW13001 , SXW13001-126 .

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