ISCN372M pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

ISCN372M Specs and Replacement

Type Designator: ISCN372M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

ISCN372M Substitution

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ISCN372M datasheet

..1. Size:228K inchange semiconductor

iscn372m.pdf pdf_icon

isc Silicon NPN Power Transistor ISCN372M DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

7.1. Size:252K inchange semiconductor

iscn372n.pdf pdf_icon

isc Silicon NPN Power Transistor ISCN372N DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

9.1. Size:260K inchange semiconductor

iscn341n.pdf pdf_icon

isc Silicon NPN Power Transistors ISCN341N DESCRIPTION Collector-Emitter Sustaining Voltage V = 450V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 720 V CBO V Collector-Emitter Voltage 450 V CEO ... See More ⇒

9.2. Size:251K inchange semiconductor

iscn366p.pdf pdf_icon

isc Silicon NPN Power Transistor ISCN366P DESCRIPTION DC Current Gain- h = 20-60@I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒

Detailed specifications: KSE340J , KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B , ISCN366P , 2SD1047 , ISCN372N , SSCP005GSB , SJT13009NT , 2N5401B , 2N5401B-Y1 , 2N5401B-Y2 , 2N5551A , 2N5551A-Y1 .