ISCN372M Todos los transistores

 

ISCN372M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ISCN372M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3
 

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ISCN372M Datasheet (PDF)

 ..1. Size:228K  inchange semiconductor
 iscn372m.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistor ISCN372MDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 7.1. Size:252K  inchange semiconductor
 iscn372n.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistor ISCN372NDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.1. Size:260K  inchange semiconductor
 iscn341n.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistors ISCN341NDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 450V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 720 VCBOV Collector-Emitter Voltage 450 VCEO

 9.2. Size:251K  inchange semiconductor
 iscn366p.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistor ISCN366PDESCRIPTIONDC Current Gain-: h = 20-60@I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N6391

 

 
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