ISCN372M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ISCN372M  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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ISCN372M datasheet

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 iscn372m.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistor ISCN372M DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 7.1. Size:252K  inchange semiconductor
 iscn372n.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistor ISCN372N DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.1. Size:260K  inchange semiconductor
 iscn341n.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistors ISCN341N DESCRIPTION Collector-Emitter Sustaining Voltage V = 450V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 720 V CBO V Collector-Emitter Voltage 450 V CEO

 9.2. Size:251K  inchange semiconductor
 iscn366p.pdf pdf_icon

ISCN372M

isc Silicon NPN Power Transistor ISCN366P DESCRIPTION DC Current Gain- h = 20-60@I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

MOSTRAR MÁS

Otros transistores... KSE340J, KSE350J, KSH13005, 2SC3866A, 3DK501D, 3DA77, 3DF5B, ISCN366P, TIP3055, ISCN372N, SSCP005GSB, SJT13009NT, 2N5401B, 2N5401B-Y1, 2N5401B-Y2, 2N5551A, 2N5551A-Y1