SSCP005GSB Datasheet, Equivalent, Cross Reference Search
Type Designator: SSCP005GSB
SMD Transistor Code: P005
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23-6L
SSCP005GSB Transistor Equivalent Substitute - Cross-Reference Search
SSCP005GSB Datasheet (PDF)
..1. Size:502K afsemi
sscp005gsb.pdf
sscp005gsb.pdf
SSCP005GSB SSCP005GSB High Frequency High Gain PNP Power BJT Features Pin configuration VCE VBE VCESAT Typ. IC Top view -40V -6V -150mV -3A Description This device is produced with advanced high carrier density technology, which is especially used SOT23-6L to minimize saturation voltage drop. This device particularly suits low voltage applications such a
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
