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SSCP005GSB Specs and Replacement

Type Designator: SSCP005GSB

SMD Transistor Code: P005

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23-6L

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SSCP005GSB datasheet

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SSCP005GSB

SSCP005GSB SSCP005GSB High Frequency High Gain PNP Power BJT Features Pin configuration VCE VBE VCESAT Typ. IC Top view -40V -6V -150mV -3A Description This device is produced with advanced high carrier density technology, which is especially used SOT23-6L to minimize saturation voltage drop. This device particularly suits low voltage applications such a... See More ⇒

Detailed specifications: KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B , ISCN366P , ISCN372M , ISCN372N , S9014 , SJT13009NT , 2N5401B , 2N5401B-Y1 , 2N5401B-Y2 , 2N5551A , 2N5551A-Y1 , 2N5551A-Y2 , A1013A .

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