A1013A-O Specs and Replacement

Type Designator: A1013A-O

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92L

 A1013A-O Substitution

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A1013A-O datasheet

 8.1. Size:358K  feihonltd

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A1013A-O

MAIN CHARACTERISTICS FEATURES IC -1.0A Epitaxial silicon VCEO -160V High switching speed PC 900mW C2383A Complementary to C2383A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit ... See More ⇒

 9.1. Size:209K  toshiba

2sa1013.pdf pdf_icon

A1013A-O

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 9.2. Size:55K  fairchild semi

ksa1013.pdf pdf_icon

A1013A-O

KSA1013 Color TV Audio Output Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1 A IB Base Current -0.5 A P... See More ⇒

 9.3. Size:86K  samsung

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A1013A-O

KSA1013 PNP EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT TO-92L COLOR TV VERTICAL DEFLECTION OUTPUT ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Base Current IB -0.5 A Collector Dissipation PC 900 W Junction Temperature TJ ... See More ⇒

Detailed specifications: 2N5401B, 2N5401B-Y1, 2N5401B-Y2, 2N5551A, 2N5551A-Y1, 2N5551A-Y2, A1013A, A1013A-R, 2SA1837, A1013A-Y, A1013C, A1013C-R, A1013C-O, A1013C-Y, A1015A, A1015A-O, A1015A-Y

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