A1013A-O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: A1013A-O
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 15 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92L

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A1013A-O Datasheet (PDF)

8.1. Size:358K feihonltd
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MAIN CHARACTERISTICS FEATURES IC -1.0A Epitaxial silicon VCEO -160V High switching speed PC 900mW C2383A Complementary to C2383A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

9.1. Size:209K toshiba
2sa1013.pdf pdf_icon

9.2. Size:55K fairchild semi
ksa1013.pdf pdf_icon

KSA1013Color TV Audio OutputColor TV Vertical Deflection OutputTO-92L11. Emitter 2. Collector 3. BasePNP EPITAXIAL SILICON TRANSISTORAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -160 VVEBO Emitter-Base Voltage -6 VIC Collector Current -1 AIB Base Current -0.5 AP

9.3. Size:86K samsung
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KSA1013 PNP EPITAXIAL SILICON TRANSISTORCOLOR TV AUDIO OUTPUTTO-92LCOLOR TV VERTICAL DEFLECTION OUTPUTABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -160 VEmitter-Base Voltage VEBO -6 VCollector Current IC -1 ABase Current IB -0.5 ACollector Dissipation PC 900 WJunction Temperature TJ

9.4. Size:293K mcc
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MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

9.5. Size:293K mcc
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9.6. Size:293K mcc
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9.7. Size:366K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.8. Size:104K utc
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UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTCs advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.

9.9. Size:369K secos
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2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High VoltageVCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1112Collector 22 Complementary to 2SC2383 23Base 333 JA DCLASSIFICATION OF hFE Millimete

9.10. Size:2681K jiangsu
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltag

9.11. Size:212K lge
2sa1013 to-92mod.pdf pdf_icon

2SA1013 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.800Features6.200High voltage:VCEO=-160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SC2383 1.1000.4000.60013.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted)

9.12. Size:228K lge
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2SA1013 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High voltage:VCEO=-160V 8.2000.600 Large continuous collector current capability 0.800Complementary to 2SC2383 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640

9.13. Size:293K cystek
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Spec. No. : C233K3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1013K3Features Low V , V = -387mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-160V CEO Complementary to BTC2383K3 Pb-free lead plating and halogen-free package Symbol Outline B

9.14. Size:926K blue-rocket-elect
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2SA1013T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC2383T High voltage, large continuous collector current capability, Complementary pair with 2SC2383T. / Applications ,

9.15. Size:937K blue-rocket-elect
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2SA1013 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2383 High voltage, large continuous collector current capability, Complementary pair with 2SC2383.. / Applications ,

9.16. Size:240K china
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A1013 PNP silicon APPLICATION: Color TV Ver.Deflecation Output Applications. Color TV Class B Sound Output Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VTO-92L1Emitter-base voltage VEBO -6 V1. Emitter 2. Collector 3. BaseCollector curr

9.17. Size:305K kexin
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SMD Type TransistorsPNP Transistors2SA10131.70 0.1 Features High voltage Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

9.18. Size:564K feihonltd
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MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW 2SC2383 Complementary to 2SC2383 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

9.19. Size:476K fuxinsemi
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9.20. Size:1618K pjsemi
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2SA1013SQ PNP TransistorFeatures SOT-89 High voltage Large continuous collector current capabilityEquivalent Circuit 2.Collector1.Base 2.Collector 3. EmitterMarking Code : 2SA1013SQ-R : 1013R 1.Base2SA1013SQ-O : 1013O 2SA1013SQ-Y : 1013Y3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Va

9.21. Size:342K cn yfw
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2SA1013 SOT-89 PNP Transistors3 Features2 High voltage1.Base1 Large continuous collector current capability2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -160Collector - Emitter Voltage VCEO -160 VEmitter - Base Voltage VEBO -6Collector Current - Con

9.22. Size:170K inchange semiconductor
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INCHANGE Semiconductorisc Silicon PNP Transistor 2SA1013DESCRIPTIONHigh Voltage and High CurrentVceo=-160V(Min.Excellent hFE LinearityLow NoiseComplement to Type 2SC2383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.AB

Otros transistores... 2N5401B , 2N5401B-Y1 , 2N5401B-Y2 , 2N5551A , 2N5551A-Y1 , 2N5551A-Y2 , A1013A , A1013A-R , BC546 , A1013A-Y , A1013C , A1013C-R , A1013C-O , A1013C-Y , A1015A , A1015A-O , A1015A-Y .