2N1309 Specs and Replacement
Type Designator: 2N1309
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO5
2N1309 Substitution
- BJT ⓘ Cross-Reference Search
2N1309 datasheet
2n1303 2n1305 2n1307 2n1309.pdf 
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
Detailed specifications: 2N1301, 2N1302, 2N1303, 2N1304, 2N1305, 2N1306, 2N1307, 2N1308, D667, 2N1309A, 2N130A, 2N131, 2N1310, 2N1311, 2N1312, 2N1313, 2N1314
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