C945B Specs and Replacement

Type Designator: C945B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 52 V

Maximum Emitter-Base Voltage |Veb|: 5.5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO92

 C945B Substitution

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C945B datasheet

 ..1. Size:468K  feihonltd

 c945b.pdf pdf_icon

C945B

TRANSISTOR C945B MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency po... See More ⇒

 0.1. Size:272K  kec

 ktc945b.pdf pdf_icon

C945B

SEMICONDUCTOR KTC945B TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTA733B(O, Y, GR class). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MA... See More ⇒

 0.2. Size:66K  first silicon

 ftc945b.pdf pdf_icon

C945B

SEMICONDUCTOR FTC945B TECHNICAL DATA NPN TRANSISTOR B C FEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAX E B 4.80 MAX G Complementary to FTA733B C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Units _ H J 14.00 + 0.50 L 2.30 F F VCBO Collector-Base Voltage 60 V ... See More ⇒

Detailed specifications: C9013-H-G, C9013-H-H, C9013-H-I, C945AF, C945AF-R, C945AF-Q, C945AF-P, C945AF-K, A1015, C945B-R, C945B-Q, C945B-P, C945B-K, D667A, D880A, D880A-O, D880A-Y

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