D882B Specs and Replacement
Type Designator: D882B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 typ MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126
D882B Substitution
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D882B datasheet
MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 30V PC 1.0W High switching speed B722 Complementary to B772 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequen... See More ⇒
Detailed specifications: D880A, D880A-O, D880A-Y, D880A-G, D880C, D880C-O, D880C-Y, D880C-G, 2SD1047, D882B-R, D882B-Q, D882B-P, D882B-E, D965A, D965A-P, D965A-Q, D965A-R
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