S8050DAF Specs and Replacement

Type Designator: S8050DAF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO92

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S8050DAF datasheet

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S8050DAF

IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 1W S8550DA Complementary to S8550DA RoHS RoHS product High frequency switch power supply Commonly power amplifier circuit High frequency power transform TO-92 ... See More ⇒

 8.1. Size:222K  mcc

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S8050DAF

MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone (818) 701-4933 Fax (818) 701-4939 S8050-D Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating an... See More ⇒

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Detailed specifications: FHP13007A-H1, FHP13007A-H2, J13007-1A, J13007-1A-H1, J13007-1A-H2, KSP42A, KSP92A, S8050DA, SS8050, S8050DAF-C, S8050DAF-D, S8050SDB, S8550DA, TIP31CA, TIP41CA, MMBT2222E, MMBT2222AE

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