S8050DAF-D Specs and Replacement

Type Designator: S8050DAF-D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO92

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S8050DAF-D datasheet

 6.1. Size:290K  feihonltd

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 7.1. Size:900K  feihonltd

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S8050DAF-D

IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 1W S8550DA Complementary to S8550DA RoHS RoHS product High frequency switch power supply Commonly power amplifier circuit High frequency power transform TO-92 ... See More ⇒

 8.1. Size:222K  mcc

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S8050DAF-D

MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone (818) 701-4933 Fax (818) 701-4939 S8050-D Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating an... See More ⇒

 8.2. Size:478K  feihonltd

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Detailed specifications: J13007-1A, J13007-1A-H1, J13007-1A-H2, KSP42A, KSP92A, S8050DA, S8050DAF, S8050DAF-C, 9014, S8050SDB, S8550DA, TIP31CA, TIP41CA, MMBT2222E, MMBT2222AE, SS8050-1.5A-C, SS8050-1.5A-D

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