2SB772U-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB772U-E
SMD Transistor Code: B772*
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
2SB772U-E Transistor Equivalent Substitute - Cross-Reference Search
2SB772U-E Datasheet (PDF)
2sb772u-r 2sb772u-q 2sb772u-p 2sb772u-e.pdf
2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Current
st2sb772u.pdf
ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Curre
2sb772u.pdf
2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING:B772 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak C
2sb772.pdf
2SB772PNP medium power transistorFeatures High current Low saturation voltage Complement to 2SD882Applications12 Voltage regulation3 Relay driver SOT-32(TO-126) Generic switch Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a PNP transistor manufactured by using planar Technology re
2sb772-r.pdf
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
2sb772-y.pdf
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
2sb772-gr.pdf
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
2sb772-o.pdf
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
2sb772s.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 DESCRIPTION SOT-223 SOT-89The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A 1* Low saturation voltage * Complement to 2SD882S TO-92
2sb772.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number
2sb772l.pdf
UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORDESCRIPTIONThe UTC 2SB772L is a medium power low voltagetransistor, designed for audio power amplifier, DC-DCconverter and voltage regulator.FEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SD882LTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C
2sb772.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB772 DESCRIPTION With TO-126 package Complement to type 2SD882 APPLICATIONS Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DC- DC converter and relay driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25
2sb772 2sd882.pdf
2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc
2sb772d.pdf
2SB772D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,
2sb772s.pdf
2SB772S Rev.A May.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features VCE(sat),,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,
2sb772t.pdf
2SB772T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features V ,,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,
2sb772n.pdf
2SB772N(BR3CA772N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 PNP Silicon PNP transistor in a SOT-223 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,
2sb772.pdf
2SB772 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,
2sb772l.pdf
2SB772L(BR3CA772L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features , h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,
2sb772b.pdf
2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
2sb772m.pdf
2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications ,,
st2sb772r.pdf
ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati
st2sb772t.pdf
ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current
l2sb772q.pdf
LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB772Q L2SB772PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB772Q 72Q 2500/Tape&Reel2,4L2SB772P 72P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas
2sb772-126.pdf
DIP Type TransistorsPNP Transistors2SB772TO-126Unit:mm8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage3.20 0.10 Complement to 2SD882(1.00) (0.50)0.75 0.101.75 0.201.60 0.100.75 0.101 2 3#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitte
2sb772a.pdf
SMD Type TransistorsPNP Transistors2SB772A Features1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -70 VCollector to Emitter Voltage VCEO -60 VEmitter to Base V
2sb772.pdf
SMD Type TransistorsTPNP Transistor2SB772TO-252Unit: mm Features+0.15 +0.16.50-0.15 2.30-0.1 PNP transistor High current output up to 3A+0.2 +0.85.30-0.2 0.50-0.7 Low Saturation Voltage4 Complement to 2SD8820.127+0.1 max0.80-0.1231+0.12.3 0.60-0.11. BASE+0.154.60-0.152. COLLECTOR3. EMITTER4. COLLECTOR Absolute Maximum Rati
2sb772gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SB772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.
2sb772zgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SB772ZGPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate).6.5
2sb772t 3ca772t.pdf
2SB772T(3CA772T) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE
2sb772i 3ca772i.pdf
2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE
2sb772l 3ca772l.pdf
2SB772L(3CA772L) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
2sb772s 3ca772s.pdf
2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE
2sb772d 3ca772d.pdf
2SB772D(3CA772D) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h ./Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
2sb772m 3ca772m.pdf
2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR :,, Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE/Absolut
2sb772b 3ca772b.pdf
2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
2sb772i.pdf
2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE
2sb772-ms.pdf
www.msksemi.com2SB772-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A
2sb772.pdf
www.msksemi.com2SB772Semiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP) FEATURES Low Speed Switching213TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 1. BASEVEBO Emitter-Base Voltage -6 V 2. COLLECTOR IC Collector Current -Continuous -3
2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf
2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequency power amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbo
2sb772-r 2sb772-q 2sb772-p 2sb772-e.pdf
B772PNP Transistors Features3 PNP transistor High current output up to 3A2 Low Saturation Voltage1.Base1 Complement to 2SD8822.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -40 VCollector to Emitter Voltage VCEO -30 VEmitter to Base Voltage VEBO -6 V
2sb772sq.pdf
2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequencypower amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbol
2sb772.pdf
isc Silicon PNP Power Transistor 2SB772DESCRIPTIONHigh Collector Current -I = -3ACHigh Collector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD882Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in the output stage of 3 watts a
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
