All Transistors. 2SA1179 Datasheet

 

2SA1179 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1179
   SMD Transistor Code: M
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO236

 2SA1179 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1179 Datasheet (PDF)

 ..1. Size:41K  sanyo
2sa1179 2sa1179n.pdf

2SA1179
2SA1179

No. N71982SA1179N / 2SC2812NNo. N719872602PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu

 ..2. Size:179K  secos
2sa1179.pdf

2SA1179
2SA1179

2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage AL33Top View C B11 2MARKING 2K EProduct Marking Code D2SA1179 MH JF GMillimeter MillimeterPACKAGE INFORMATION REF. REF.Min. Max. Min. Ma

 ..3. Size:620K  jiangsu
2sa1179.pdf

2SA1179
2SA1179

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1179 TRANSISTOR (PNP)3FEATURES 1 . High breakdown voltage 1. BASE 22. EMITTER MARKING: M 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base

 ..4. Size:360K  htsemi
2sa1179.pdf

2SA1179
2SA1179

2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20

 ..5. Size:285K  lge
2sa1179 sot-23.pdf

2SA1179
2SA1179

2SA1179 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -

 ..6. Size:409K  kexin
2sa1179.pdf

2SA1179

SMD Type orSMD Type TransistICsPNP Transistors2SA1179SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -55 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO

 0.1. Size:35K  sanyo
2sa1179n 2sc2812n.pdf

2SA1179
2SA1179

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

 8.1. Size:52K  sanyo
2sa1177.pdf

2SA1179
2SA1179

Ordering number:ENN851HPNP Epitaxial Planar Silicon Transistor2SA1177HF Amp ApplicationsUse Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators, converters, IF amplifiers.2033A[2SA1177]2.24.0Features High fT (230MHz typ.) and small Cre (1.1 pF typ.). Small NF (2.5dB typ.). 0.40.50.40.41 2 31.3 1.31 : Emitter

 8.2. Size:222K  nec
2sa1175.pdf

2SA1179
2SA1179

 8.3. Size:24K  hitachi
2sa1171.pdf

2SA1179
2SA1179

2SA1171Silicon PNP EpitaxialApplicationLow frequency small signal amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1171Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 90 VCollector to emitter voltage VCEO 90 VEmitter to base voltage VEBO 5 VCollector current IC 50 mACollector power dissipation P

 8.4. Size:37K  no
2sa1170.pdf

2SA1179

 8.5. Size:161K  jmnic
2sa1170.pdf

2SA1179
2SA1179

JMnic Product Specification Silicon PNP Power Transistors 2SA1170 DESCRIPTION With MT-200 package High power dissipation Complement to type 2SC2774 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratin

 8.6. Size:666K  kexin
2sa1171.pdf

2SA1179
2SA1179

SMD Type orSMD Type TransistICsPNP Transistors2SA1171SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Low frequency small signal amplifier+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -90 VCollector to emitter voltage VCEO -90 VEmitter

 8.7. Size:924K  kexin
2sa1173.pdf

2SA1179
2SA1179

SMD Type TransistorsPNP Transistors2SA1173SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-140V Complementary to 2SC27800.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage V

 8.8. Size:217K  inchange semiconductor
2sa1170.pdf

2SA1179
2SA1179

isc Silicon PNP Power Transistor 2SA1170DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2774APPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Voltage -200 V

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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