MMDT9014DW Datasheet, Equivalent, Cross Reference Search
Type Designator: MMDT9014DW
SMD Transistor Code: TGL6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT363
MMDT9014DW Transistor Equivalent Substitute - Cross-Reference Search
MMDT9014DW Datasheet (PDF)
mmdt9014dw.pdf
Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN)6FEATURES54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 )DW12 Ideal for Medium Power Amplification and Switching3MARKING:TGL6MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltag
mmdt9014.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsMMDT9014 DUAL TRANSISTOR (NPN+NPN)SOT-363 FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015) Ideal for Medium Power Amplification and SwitchingMARKING:TGL6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-
mmdt9015.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsSOT-363 MMDT9015 TRANSISTOR (PNP)FEATURES Complementary to MMDT9014MARKING: TGM6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEOV Emitter-Base Voltage -5 V EBOI Collector Curr
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
