FHT5551-ME Specs and Replacement

Type Designator: FHT5551-ME

SMD Transistor Code: G1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT23

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FHT5551-ME datasheet

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FHT5551-ME

FHT5551-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona... See More ⇒

Detailed specifications: MMDT9014DW, FHS2222A-ME, FHS2907A-ME, FHS3904-ME, FHS3906-ME, FHT1298O-ME, FHT1298Y-ME, FHT5401-ME, 13009, FHT8050O, FHT8050Y, FHT8050G, FHT8050D, FHT8050O-ME, FHT8050Y-ME, FHT8050G-ME, FHT9012O-ME

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