All Transistors. 2SA1179M7 Datasheet

 

2SA1179M7 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1179M7
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO236

 2SA1179M7 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1179M7 Datasheet (PDF)

 7.1. Size:35K  sanyo
2sa1179n 2sc2812n.pdf

2SA1179M7
2SA1179M7

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

 7.2. Size:41K  sanyo
2sa1179 2sa1179n.pdf

2SA1179M7
2SA1179M7

No. N71982SA1179N / 2SC2812NNo. N719872602PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu

 7.3. Size:179K  secos
2sa1179.pdf

2SA1179M7
2SA1179M7

2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage AL33Top View C B11 2MARKING 2K EProduct Marking Code D2SA1179 MH JF GMillimeter MillimeterPACKAGE INFORMATION REF. REF.Min. Max. Min. Ma

 7.4. Size:620K  jiangsu
2sa1179.pdf

2SA1179M7
2SA1179M7

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1179 TRANSISTOR (PNP)3FEATURES 1 . High breakdown voltage 1. BASE 22. EMITTER MARKING: M 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base

 7.5. Size:360K  htsemi
2sa1179.pdf

2SA1179M7
2SA1179M7

2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20

 7.6. Size:285K  lge
2sa1179 sot-23.pdf

2SA1179M7
2SA1179M7

2SA1179 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -

 7.7. Size:409K  kexin
2sa1179.pdf

2SA1179M7

SMD Type orSMD Type TransistICsPNP Transistors2SA1179SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -55 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO

Datasheet: 2SA1177D , 2SA1177E , 2SA1177F , 2SA1178 , 2SA1179 , 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , C945 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2SA1182O , 2SA1182Y , 2SA1183 , 2SA1184 .

History: KSE13008 | SFT353

 

 
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