FHTA8550G-ME Specs and Replacement

Type Designator: FHTA8550G-ME

SMD Transistor Code: 9G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 280

Noise Figure, dB: -

Package: SOT23

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FHTA8550G-ME datasheet

 6.1. Size:469K  cn fh

 fhta8550-me.pdf pdf_icon

FHTA8550G-ME

FHTA8550-ME PNP Transistor DESCRIPTIONS SOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition... See More ⇒

 9.1. Size:464K  cn fh

 fhta8050-me.pdf pdf_icon

FHTA8550G-ME

FHTA8050-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition... See More ⇒

Detailed specifications: FHTA1514R, FHTA1514S, FHTA42-ME, FHTA8050O-ME, FHTA8050Y-ME, FHTA8050G-ME, FHTA8550O-ME, FHTA8550Y-ME, C3198, FHTA92-ME, FHTL8050O-ME, FHTL8050Y-ME, FHTL8050G-ME, FHTL8050M-ME, 13001, 2SB649AD, 2SB649AD-B

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