FHTL8050G-ME Datasheet and Replacement
Type Designator: FHTL8050G-ME
SMD Transistor Code: L7G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 280
Noise Figure, dB: -
Package: SOT23
FHTL8050G-ME Substitution
FHTL8050G-ME Datasheet (PDF)
fhtl8050-me.pdf

FHTL8050-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Addition
Datasheet: FHTA8050Y-ME , FHTA8050G-ME , FHTA8550O-ME , FHTA8550Y-ME , FHTA8550G-ME , FHTA92-ME , FHTL8050O-ME , FHTL8050Y-ME , 8550 , FHTL8050M-ME , 13001 , 2SB649AD , 2SB649AD-B , 2SB649AD-C , 2SB649AD-D , 2SD1857D , 2SD1857D-P .
Keywords - FHTL8050G-ME transistor datasheet
FHTL8050G-ME cross reference
FHTL8050G-ME equivalent finder
FHTL8050G-ME lookup
FHTL8050G-ME substitution
FHTL8050G-ME replacement



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134 | 60r190p datasheet | cs30n20 datasheet | go42n10