S8550MG-C Datasheet. Specs and Replacement

Type Designator: S8550MG-C  📄📄 

SMD Transistor Code: GY4C

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.45 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

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S8550MG-C datasheet

 7.1. Size:704K  blue-rocket-elect

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S8550MG-C

S8550MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050MG Complementary pair with S8050MG.HF Product. / Applications Power amplifier applications. / Equivalent Circu... See More ⇒

 8.1. Size:665K  blue-rocket-elect

 s8550m.pdf pdf_icon

S8550MG-C

S8550M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050M Complementary pair with S8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning ... See More ⇒

 8.2. Size:136K  foshan

 3cg8550m s8550m.pdf pdf_icon

S8550MG-C

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. S8050M(3DG8050M) /Features Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA ... See More ⇒

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Detailed specifications: 3CA8550-C, 3CA8550-D, MJE13003DI1G, MPSA95, S8050MG-B, S8050MG-C, S8050MG-D, S8550MG-B, S9018, S8550MG-D, FD965S, FS13001, FC1404, FC1405, FC1406, FC1407, FC3355

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