FD965S Datasheet, Equivalent, Cross Reference Search
Type Designator: FD965S
SMD Transistor Code: 965
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: SOT23
FD965S Transistor Equivalent Substitute - Cross-Reference Search
FD965S Datasheet (PDF)
..1. Size:3119K fuxinsemi
fd965s.pdf
fd965s.pdf
FD965S TRANSISTOR (NPN)FEATURES Low Collector-Emitter Saturation Voltage SOT-23 Large Collector Power Dissipation and Current 32 Mini Power Type Package 11. BASE : 9652.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
