ZXTN2005ZQ Datasheet. Specs and Replacement

Type Designator: ZXTN2005ZQ

SMD Transistor Code: 869

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 48 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT89

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ZXTN2005ZQ datasheet

 ..1. Size:523K  diodes

 zxtn2005zq.pdf pdf_icon

ZXTN2005ZQ

ZXTN2005ZQ 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data Case SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. Case Material Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Features ... See More ⇒

 5.1. Size:104K  diodes

 zxtn2005z.pdf pdf_icon

ZXTN2005ZQ

ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES Extremely low equivalent on-resistance; RSAT = 2... See More ⇒

 6.1. Size:471K  diodes

 zxtn2005g.pdf pdf_icon

ZXTN2005ZQ

A Product Line of Diodes Incorporated Green ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 60V Case SOT223 IC = 7A Continuous Collector Current Case Material Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat) ... See More ⇒

 7.1. Size:135K  diodes

 zxtn2007z.pdf pdf_icon

ZXTN2005ZQ

ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT89 Extemely low equivalent on-resistance; RS... See More ⇒

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Detailed specifications: DDC143XU, DNLS350, DZT5551Q, FMMT459Q, FMMT491Q, FMMT560Q, FZT653Q, MMDT2227Q, A1015, ZXTN3035CLP, ZXTN4240F, ZXTP2009ZQ, HR13003, HT13003, RD9FE, BF850BF, BC857BF

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