All Transistors. BFP196 Datasheet

 

BFP196 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFP196
   SMD Transistor Code: RI*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 0.83 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT143

 BFP196 Transistor Equivalent Substitute - Cross-Reference Search

   

BFP196 Datasheet (PDF)

 ..1. Size:60K  siemens
bfp196.pdf

BFP196
BFP196

BFP 196NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configurat

 ..2. Size:551K  infineon
bfp196.pdf

BFP196
BFP196

BFP196Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband3 amplifiers in antenna and telecommunications24 systems up to 1.5 GHz at collector currents from1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101

 0.1. Size:60K  siemens
bfp196w.pdf

BFP196
BFP196

BFP 196WNPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configura

 0.2. Size:546K  infineon
bfp196w.pdf

BFP196
BFP196

BFP196WLow Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband3 amplifiers in antenna and telecommunications24 systems up to 1.5 GHz at collector currents from1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qual

 0.3. Size:220K  inchange semiconductor
bfp196w.pdf

BFP196
BFP196

isc Silicon NPN RF Transistor BFP196WDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP.@V = 6 V, I = 5 mA, f = 1GHzCE CHigh GainS 2 = 18dB TYP.21@V = 6 V,I = 30 mA,f = 1GHzCE CMinimum Lot-to-Lot variations for robustdevice performance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gainamplifiers and linear broadband amplifiers.ABSOLU

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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