All Transistors. BFP640 Datasheet

 

BFP640 Datasheet and Replacement


   Type Designator: BFP640
   SMD Transistor Code: R4*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 13 V
   Maximum Collector-Emitter Voltage |Vce|: 4.1 V
   Maximum Emitter-Base Voltage |Veb|: 1.2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 42000 MHz
   Collector Capacitance (Cc): 0.08 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT343
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BFP640 Datasheet (PDF)

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BFP640

BFP640Surface mount high linearity silicon NPN RF bipolar transistorProduct descriptionThe BFP640 is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its transition frequency fT of42 GHz and high linearity characteristics at low currents make this device particularlysuitable for energy efficiency designs a

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BFP640

BFP640ESDSurface mount robust silicon NPN RF bipolar transistorProduct descriptionThe BFP640ESD is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its ESD structure, high RF gainand low noise figure characteristics make the device suitable for a wide range of wirelessapplications. It remains cost competit

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MPS6076 | ECG36 | 2SC869 | T2448 | 2SD998 | KMMT491 | KT8271V

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