BFP720F Datasheet and Replacement
Type Designator: BFP720F
SMD Transistor Code: R9*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 45000 MHz
Collector Capacitance (Cc): 0.06 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TSFP4-1
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BFP720F Datasheet (PDF)
bfp720f.pdf

BFP720FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720F is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list High transition frequency fT = 45 GHz enables low noise figure at high frequencies:NFmin = 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gms = 21.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 21 dBm at 5.5 GHz, 3 V, 13 mAProduct validationQua
bfp720fesd.pdf

BFP720FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720FESD is a wideband RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,2 kV HBM ESD hardness High transition frequency fT = 45 GHz to enable low noise figure at high frequenci
bfp720esd.pdf

BFP720ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720ESD is a wideband RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,2 kV HBM ESD hardness Low noise figure NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 5 mA Hi
bfp720.pdf

BFP720SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list High transition frequency fT = 45 GHz to enable low noise figure at high frequencies:NFmin= 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gma = 19.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 23 dBm at 5.5 GHz, 3 V, 13 mAProduct validationQual
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: LBC807-25WT3G | DDTC125TCA | BUY21A | 3DG40005AS-H | KTA1505Y | JE8050D | MMBT5551Q
Keywords - BFP720F transistor datasheet
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History: LBC807-25WT3G | DDTC125TCA | BUY21A | 3DG40005AS-H | KTA1505Y | JE8050D | MMBT5551Q



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