BFP720FESD Datasheet. Specs and Replacement

Type Designator: BFP720FESD

SMD Transistor Code: T3*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 4.9 V

Maximum Collector-Emitter Voltage |Vce|: 4.2 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 45000 MHz

Collector Capacitance (Cc): 0.05 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TSFP4-1

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BFP720FESD datasheet

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BFP720FESD

BFP720FESD SiGe C NPN RF bipolar transistor Product description The BFP720FESD is a wideband RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV HBM ESD hardness High transition frequency fT = 45 GHz to enable low noise figure at high frequenci... See More ⇒

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BFP720FESD

BFP720F SiGe C NPN RF bipolar transistor Product description The BFP720F is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list High transition frequency fT = 45 GHz enables low noise figure at high frequencies NFmin = 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gms = 21.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 21 dBm at 5.5 GHz, 3 V, 13 mA Product validation Qua... See More ⇒

 8.1. Size:522K  infineon

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BFP720FESD

BFP720ESD SiGe C NPN RF bipolar transistor Product description The BFP720ESD is a wideband RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV HBM ESD hardness Low noise figure NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 5 mA Hi... See More ⇒

 8.2. Size:552K  infineon

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BFP720FESD

BFP720 SiGe C NPN RF bipolar transistor Product description The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list High transition frequency fT = 45 GHz to enable low noise figure at high frequencies NFmin= 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gma = 19.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 23 dBm at 5.5 GHz, 3 V, 13 mA Product validation Qual... See More ⇒

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Detailed specifications: BFP540FESD, BFP640, BFP640ESD, BFP650, BFP650F, BFP720, BFP720ESD, BFP720F, TIP31, BFP740ESD, BFP740F, BFP740FESD, BFP760, BFP780, BFP840ESD, BFP840FESD, BFP842ESD

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