BFP842ESD Datasheet. Specs and Replacement

Type Designator: BFP842ESD  📄📄 

SMD Transistor Code: T9*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 4.1 V

Maximum Collector-Emitter Voltage |Vce|: 3.25 V

Maximum Collector Current |Ic max|: 0.04 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 57000 MHz

Collector Capacitance (Cc): 0.064 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT343

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BFP842ESD datasheet

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BFP842ESD

BFP842ESD SiGe C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list Unique combination of high end RF performance and robustness 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency fT = 5... See More ⇒

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BFP842ESD

BFP843 Robust low noise broadband pre-matched RF bipolar transistor Product description The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc... See More ⇒

 9.2. Size:554K  infineon

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BFP842ESD

BFP840ESD SiGe C NPN RF bipolar transistor Product description The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab... See More ⇒

 9.3. Size:455K  infineon

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BFP842ESD

BFP843F SiGe C NPN RF bipolar transistor Product description The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies ... See More ⇒

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Detailed specifications: BFP720FESD, BFP740ESD, BFP740F, BFP740FESD, BFP760, BFP780, BFP840ESD, BFP840FESD, BD135, BFP843, BFP843F, BFQ790, BFR193F, BFR193L3, BFR193W, BFR360L3, BFR380F

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