BFR360L3 Datasheet and Replacement
Type Designator: BFR360L3
SMD Transistor Code: FB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.21 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 11000 MHz
Collector Capacitance (Cc): 0.26 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TSLP3-1
BFR360L3 Substitution
BFR360L3 Datasheet (PDF)
bfr360l3.pdf

BFR360L3Low Noise Silicon Bipolar RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device,
Datasheet: BFP840FESD , BFP842ESD , BFP843 , BFP843F , BFQ790 , BFR193F , BFR193L3 , BFR193W , 2SD669A , BFR380F , BFR740EL3 , BFR740L3RH , BFR840L3RHESD , BFR843EL3 , SMBT3906L3 , LBC856AWT1G , L2SA1037AKQLT3G .
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