All Transistors. BFR740L3RH Datasheet

 

BFR740L3RH Datasheet, Equivalent, Cross Reference Search

Type Designator: BFR740L3RH

SMD Transistor Code: R9

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.16 W

Maximum Collector-Base Voltage |Vcb|: 13 V

Maximum Collector-Emitter Voltage |Vce|: 4 V

Maximum Emitter-Base Voltage |Veb|: 1.2 V

Maximum Collector Current |Ic max|: 0.04 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 42000 MHz

Collector Capacitance (Cc): 0.09 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TSLP3-9

BFR740L3RH Transistor Equivalent Substitute - Cross-Reference Search

 

BFR740L3RH Datasheet (PDF)

..1. bfr740l3rh.pdf Size:535K _infineon

BFR740L3RH
BFR740L3RH

BFR740L3RHSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR740L3RH is a wideband RF heterojunction bipolar transistor (HBT) available in alow profile package.Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless packageProduc

8.1. bfr740el3.pdf Size:541K _infineon

BFR740L3RH
BFR740L3RH

BFR740EL3SiGe:C NPN RF bipolar transistorProduct descriptionThe BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) available in alow profile package.Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless package High

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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