All Transistors. BFR740L3RH Datasheet

 

BFR740L3RH Datasheet and Replacement


   Type Designator: BFR740L3RH
   SMD Transistor Code: R9
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.16 W
   Maximum Collector-Base Voltage |Vcb|: 13 V
   Maximum Collector-Emitter Voltage |Vce|: 4 V
   Maximum Emitter-Base Voltage |Veb|: 1.2 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 42000 MHz
   Collector Capacitance (Cc): 0.09 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TSLP3-9
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BFR740L3RH Datasheet (PDF)

 ..1. Size:535K  infineon
 bfr740l3rh.pdf pdf_icon

BFR740L3RH

BFR740L3RHSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR740L3RH is a wideband RF heterojunction bipolar transistor (HBT) available in alow profile package.Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless packageProduc

 8.1. Size:541K  infineon
 bfr740el3.pdf pdf_icon

BFR740L3RH

BFR740EL3SiGe:C NPN RF bipolar transistorProduct descriptionThe BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) available in alow profile package.Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless package High

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TEC9012I | BSYP07 | 2SD1336 | MMBT3904FZ | BU1508DX | LDTA124EET1G | MMBT5551Q

Keywords - BFR740L3RH transistor datasheet

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