L2SA812QLT3G Datasheet. Specs and Replacement

Type Designator: L2SA812QLT3G

SMD Transistor Code: M8

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

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L2SA812QLT3G datasheet

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L2SA812QLT3G

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒

 4.1. Size:187K  lrc

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L2SA812QLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie... See More ⇒

 4.2. Size:193K  lrc

 l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf pdf_icon

L2SA812QLT3G

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒

 7.1. Size:191K  lrc

 l2sa812slt1g.pdf pdf_icon

L2SA812QLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SA812QLT1G Series High Voltage VCEO = -50 V. S-L2SA812QLT1G Series Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi... See More ⇒

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Detailed specifications: BFR840L3RHESD, BFR843EL3, SMBT3906L3, LBC856AWT1G, L2SA1037AKQLT3G, L2SA1774QT3G, L2SA1774RT3G, L2SA1774ST3G, 2SA1015, L2SA812RLT3G, L2SA812SLT3G, L2SC1623QLT3G, L2SC1623RLT3G, L2SC1623SLT3G, L2SC2411KRLT3G, L2SC2412KQLT3G, L2SC2412KRLT3G

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