L2SA812RLT3G Datasheet. Specs and Replacement
Type Designator: L2SA812RLT3G
SMD Transistor Code: M6
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT23
L2SA812RLT3G Substitution
- BJT ⓘ Cross-Reference Search
L2SA812RLT3G datasheet
l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf ![]()
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒
l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf ![]()
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SA812QLT1G Series High Voltage VCEO = -50 V. S-L2SA812QLT1G Series Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi... See More ⇒
Detailed specifications: BFR843EL3, SMBT3906L3, LBC856AWT1G, L2SA1037AKQLT3G, L2SA1774QT3G, L2SA1774RT3G, L2SA1774ST3G, L2SA812QLT3G, BC556, L2SA812SLT3G, L2SC1623QLT3G, L2SC1623RLT3G, L2SC1623SLT3G, L2SC2411KRLT3G, L2SC2412KQLT3G, L2SC2412KRLT3G, L2SC2412KSLT3G
Keywords - L2SA812RLT3G pdf specs
L2SA812RLT3G cross reference
L2SA812RLT3G equivalent finder
L2SA812RLT3G pdf lookup
L2SA812RLT3G substitution
L2SA812RLT3G replacement





