2SA1199 Datasheet and Replacement
Type Designator: 2SA1199
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92
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2SA1199 Datasheet (PDF)
2sa1199.pdf

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2sa1193.pdf

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
Datasheet: 2SA1193 , 2SA1194 , 2SA1194K , 2SA1195 , 2SA1196 , 2SA1197 , 2SA1198 , 2SA1198S , A733 , 2SA1199S , 2SA12 , 2SA120 , 2SA1200 , 2SA1201 , 2SA1202 , 2SA1203 , 2SA1204 .
History: 2SA1208 | 2SA1207R | 2SA710 | 2SA1207T
Keywords - 2SA1199 transistor datasheet
2SA1199 cross reference
2SA1199 equivalent finder
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History: 2SA1208 | 2SA1207R | 2SA710 | 2SA1207T



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