All Transistors. 2SA1199 Datasheet

 

2SA1199 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1199
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO92

 2SA1199 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1199 Datasheet (PDF)

 ..1. Size:118K  rohm
2sa1199.pdf

2SA1199
2SA1199

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.1. Size:105K  1
2sa1198s 2sa1199s.pdf

2SA1199
2SA1199

 8.1. Size:126K  toshiba
2sa1195.pdf

2SA1199
2SA1199

 8.2. Size:34K  hitachi
2sa1193.pdf

2SA1199
2SA1199

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak

 8.3. Size:45K  hitachi
2sa1190 2sa1191.pdf

2SA1199
2SA1199

2SA1190, 2SA1191Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1190, 2SA1191Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1190 2SA1191 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEm

 8.4. Size:35K  hitachi
2sa1193k.pdf

2SA1199
2SA1199

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak

 8.5. Size:35K  hitachi
2sa1194.pdf

2SA1199
2SA1199

2SA1194(K)Silicon PNP EpitaxialApplicationHigh gain amplifierOutlineTO-126 MOD231. Emitter2. Collector3. Base1231Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 1 ACollector peak current IC(peak) 2 AC

 8.6. Size:148K  jmnic
2sa1195.pdf

2SA1199
2SA1199

JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION With TO-202 package High power dissipation Complement to type 2SC2483 APPLICATIONS For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYM

 8.7. Size:161K  inchange semiconductor
2sa1195.pdf

2SA1199
2SA1199

isc Silicon PNP Power Transistor 2SA1195DESCRIPTIONLow Collector Saturation VoltageHigh voltageComplement to Type 2SC2483Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Co

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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