2SA1200 Datasheet, Equivalent, Cross Reference Search

2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 High Voltage Switching Applications Unit: mm High voltage: VCEO = -150 V High transition frequency: f = 120 MHz (typ.) T Small flat package P = 1 to 2 W (mounted on ceramic substrate) C Complementary to 2SC2880 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating

SMD Type TransistorsPNP Transistors2SA1200Features1.70 0.1High Voltage : VCEO = -150VHigh Transition Frequency : fT = 120MHz(typ.)Small Flat PackageComplementary to 2SC28800.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Emitter Voltage VCEO -150 VCollector-Base Voltage VCBO -150 VEmitter-Base Vol

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit: mm Power Amplifier Applications High voltage: VCEO = -120 V High transition frequency: f = 120 MHz (typ.) T Small flat package PC = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25C) Characteri

2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Unit: mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2882 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SA1203 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2883 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO

2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2884 Maximum Ratings (Ta = 25C) Characteristics Symbol

Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5

Ordering number:EN779CPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009A Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.Switching Test CircuitIC=10IB1=10IB2=10mA

Ordering number:ENN778FPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003B Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.5.04.04.00.450.50.440.451 2 31 : Emitter

Ordering number:ENN781GPNP/NPN Epitaxial Planar Silicon Transistors2SA1208/2SC2910High-Voltage SwitchingAudio 80W Output Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2006B Excellent linearity of hFE and small Cob.[2SA1208/2SC2910] Fast swtching speed.6.05.0 4.70.50.60.5 0.51 2 31 : Emi

Ordering number:EN778EPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003A Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.JEDEC:TO-92 B:Base( ) : 2SA1207EIAJ:SC-43 C:Collector

MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ORDERING INFORMATION Ordering Numb

2SA1201PNP Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-89FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V Millimeter Millimeter REF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1201 TRANSISTOR (PNP) 1. BASE FEATURES High voltage 2. COLLECTOR High transition frequency Complementary to 2SC2881 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValueUnitVCBO -120 Collector-Base Voltage V VCEO -120

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1203 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1204 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2884 Small Flat Package3. EMITTER Audio Frequency Amplifier Application High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collecto

JMnic Product Specification Silicon PNP Power Transistors 2SA1205 DESCRIPTION With TO-3PN package High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UN

JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)

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2SA1 201SOT-89 TRANSISTOR(PNP)1. BASE FEATURES High voltage 2. COLLECTOR 1 High transition frequency 2 Complementary to 2SC2881 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage V IC Collector Current -Co

2SA1 203SOT-89-3L TRANSISTOR(PNP)1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A

2SA1 204SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2884 Small Flat Package3. EMITTER Audio Frequency Amplifier Application High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC

2SA1201SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.6 1.82 1.41.43. EMITTER 3 2.64.25Features 2.43.75 0.8 High voltage MIN0.53 High transition frequency 0.400.480.442x)0.13 B0.35 0.371.5 Complementary to 2SC2881 3.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol P

FM120-M WILLASTHRU2SA1201SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverSOD-123HTRANSISTOR se leakage current and thermal resistance.(PNP) Low profile surface mounted applica

SMD Type TransistorsPNP Transistors2SA12011.70 0.1 Features High voltage High transition frequency Complementary to 2SC28810.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collect

SMD Type TransistorsPNP Transistors 2SA12021.70 0.1FeaturesSuitable for Driver of 30 to 35 Watts Audio AmplifierSmall Flat Package0.42 0.1PC = 1 to 2W (mounted on ceramic substrate) 0.46 0.1Complementary to 2SC28821.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -80 VCollector-Emitter Voltage VCEO -

SMD Type TransistorsPNP Transistors 2SA12031.70 0.1FeaturesSuitable For Output Stage of 3 Watts AmplifierSmall Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28831.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -30 V

SMD Type TransistorsPNP Transistors 2SA12041.70 0.1FeaturesSuitable For Output Stage of 1 Watts AmplifierSmall Flat PackagePC = 1 to 2W (mounted on ceramic substrate)0.42 0.10.46 0.1Complementary to 2SC28841.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -35 VCollector-Emitter Voltage VCEO -30 V

isc Silicon PNP Power Transistor 2SA1205DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max.)@ I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon PNP Power Transistor 2SA1209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC2911Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM