LBTP460Z4TZHG Datasheet, Equivalent, Cross Reference Search
Type Designator: LBTP460Z4TZHG
SMD Transistor Code: PD
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 102 MHz
Collector Capacitance (Cc): 66.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT223
LBTP460Z4TZHG Transistor Equivalent Substitute - Cross-Reference Search
LBTP460Z4TZHG Datasheet (PDF)
..1. Size:834K lrc
lbtp460z4tzhg.pdf
lbtp460z4tzhg.pdf
LBTP460Z4TZHGS-LBTP460Z4TZHG60 V PNP TRANSISTOR1. FEATURES Low collector-emitter saturation voltage High collector current capability High collector current gain High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) SOT223 MM:>400V, HBM:>8000V We declare that the material of product compliance withRoHS requirements an
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
