All Transistors. LH8550QLT3G Datasheet

 

LH8550QLT3G Datasheet and Replacement


   Type Designator: LH8550QLT3G
   SMD Transistor Code: KIY
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23
 

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LH8550QLT3G Datasheet (PDF)

 ..1. Size:138K  lrc
 lh8550plt1g lh8550plt3g lh8550qlt1g lh8550qlt3g.pdf pdf_icon

LH8550QLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

 5.1. Size:138K  lrc
 lh8550qlt1g.pdf pdf_icon

LH8550QLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

 5.2. Size:138K  lrc
 lh8550plt1g lh8550qlt1g.pdf pdf_icon

LH8550QLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

 8.1. Size:157K  lrc
 lh8550plt1g.pdf pdf_icon

LH8550QLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

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Datasheet: LDTA144EET1G , LDTA144WET1G , LDTC144WM3T5G , LDTD123YLT1G , LDTD123YLT3G , LH8050PLT3G , LH8050QLT3G , LH8550PLT3G , 2N2222 , LMBT2222ADW1T3G , LMBT2222ALT3G , LMBT2222ATT3G , LMBT2907ALT3G , LMBT2907AWT3G , LMBT2907LT1G , LMBT2907LT3G , LMBT3904DW1T3G .

History: 2SD146F | BD733 | 2SD555 | 2SC1746A | 2SC3402 | P701B | MRF891

Keywords - LH8550QLT3G transistor datasheet

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