All Transistors. LMBT3904DW1T3G Datasheet

 

LMBT3904DW1T3G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LMBT3904DW1T3G
   SMD Transistor Code: MA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT363

 LMBT3904DW1T3G Transistor Equivalent Substitute - Cross-Reference Search

   

LMBT3904DW1T3G Datasheet (PDF)

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lmbt3904dw1t1g lmbt3904dw1t3g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LMBT3904DW1T1GS-LMBT3904DW1T1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VSimplifi

 2.1. Size:506K  lrc
lmbt3904dw1t1g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors The LMBT3904DW1T1G device is a spinoff of our popularLMBT3904DW1T1GSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT363S-LMBT3904DW1T1Gsixleaded surface mount package. By putting two discrete devicesin one package , this device is ideal fo

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lmbt3904n3t5g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LMBT3904N3T5GS-LMBT3904N3T5GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT883 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mar

 6.2. Size:590K  lrc
lmbt3904lt1g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904LT1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU

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lmbt3904tt1g lmbt3904tt3g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking

 6.4. Size:643K  lrc
lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes aLMBT3904LT1GPb-Free Lead FinishS-LMBT3904LT1G We declare that the material of product compliance with RoHSrequirements. S- Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable

 6.5. Size:358K  lrc
lmbt3904lt1g lmbt3904lt3g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LMBT3904LT1GS-LMBT3904LT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

 6.6. Size:221K  lrc
lmbt3904tt1g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking

 6.7. Size:616K  lrc
lmbt3904wt1g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904W T1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904W T1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable.1DEVICE MARKING AND RESISTOR

 6.8. Size:471K  lrc
lmbt3904wt1g lmbt3904wt3g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

LMBT3904WT1GS-LMBT3904WT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

 6.9. Size:243K  inchange semiconductor
lmbt3904lt1g.pdf

LMBT3904DW1T3G
LMBT3904DW1T3G

isc Silicon NPN RF Transistor LMBT3904LT1GDESCRIPTIONLow Noise FigureNF = 5 dB(MAX)@V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0kCE C SMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N315A | LMUN5213DW1T1G | BUL3P5 | KTC3880R | BC279

 

 
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