LMBT5541DW1T3G Datasheet, Equivalent, Cross Reference Search
Type Designator: LMBT5541DW1T3G
SMD Transistor Code: GL
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT363
LMBT5541DW1T3G Transistor Equivalent Substitute - Cross-Reference Search
LMBT5541DW1T3G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5541DW1T1GS-LMBT5541DW1T1GFEATURE We declare that the material of product is ROHS compliant and halogen free. 65 4S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING INFORMATIO
lmbt5541dw1t1g.pdf
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LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5541DW1T1GS-LMBT5541DW1T1GFEATURE We declare that the material of product is ROHS compliant and halogen free. 65 4S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING INFORMATIO
lmbt5551dw1t1g.pdf
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LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De
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LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3
lmbt5551lt1g.pdf
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LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3
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LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3
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LMBT5551LT1GS-LMBT5551LT1GHigh Voltage Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking ShippingLMB
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LMBT5551DW1T1GS-LMBT5551DW1T1GDUAL NPN SMALL SIGNAL SURFACEMOUNT TRANSISTOR 1. FEATURESWe declare that the material of product compliance withSC88(SOT-363) RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101C2 B1 E1 qualified and PPAP capable.2. DEVICE MARKING AND ORD
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .