LMBT6520LT3G Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

LMBT6520LT3G Datasheet. Specs and Replacement

Type Designator: LMBT6520LT3G

SMD Transistor Code: 2Z

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT23

LMBT6520LT3G Substitution

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LMBT6520LT3G datasheet

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LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. S-LMBT6520LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 Ordering Information 1 Device Marking Shipping 2 LMBT6520LT1G 3000/Tape&... See More ⇒

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LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G We declare that the material of product S-LMBT6517LT1G compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6 517LT1G 3000/Tape&Reel 1Z S-LMBT6 517LT1G 1 LMBT6517LT3G 10000/Tape&Reel 1Z 2 S-LMBT6517LT3G SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 COLLECTO... See More ⇒

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