LMBTA42LT3G Datasheet, Equivalent, Cross Reference Search
Type Designator: LMBTA42LT3G
SMD Transistor Code: 1D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
LMBTA42LT3G Transistor Equivalent Substitute - Cross-Reference Search
LMBTA42LT3G Datasheet (PDF)
lmbta42lt1g lmbta42lt3g lmbta43lt1g lmbta43lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta42lt1g lmbta43lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta42lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta44lt1g.pdf
LESHAN RADIO COMPANY, LTD.LMBTA44LT1G LMBTA44LT1GS-LMBTA44LT1GNPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of productcompliance with RoHS requirements.3DescriptionThe LMBTA44LT1G is designed for application 1that requires high voltage.2Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mASOT 23 Complementary to LMBTA94LT1G S- Prefix
lmbta43lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsWe declare that the material of product compliance with RoHS requirements.LMBTA42LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and LMBTA43LT1GPPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONS-LMBTA43LT1GDevice Marking P
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
